View IRF1104_5727.PDF datasheet online --- IC-ON-LINE

Datasheet File OCR Text:

PD- 9.1724A
PRELIMINARY
l l l l l l
IRF1104
HEXFET(R) Power MOSFET
D
Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175C Operating Temperature Fast Switching Fully Avalanche Rated
VDSS = 40V
G S
RDS(on) = 0.009 ID = 100A
Description
Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 watts. The low thermal resistance and low package cost of the TO-220 contribute to its wide acceptance throughout the industry.
TO-220AB
Absolute Maximum Ratings
Parameter
ID @ TC = 25C ID @ TC = 100C IDM PD @TC = 25C VGS EAS IAR EAR dv/dt TJ TSTG Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds Mounting torque, 6-32 or M3 srew
Max.
100 71 400 170 1.11 20 350 60 17 5.0 -55 to + 175 300 (1.6mm from case ) 10 lbf*in (1.1N*m)
Units
A W W/C V mJ A mJ V/ns C
Thermal Resistance
Parameter
RJC RCS RJA Junction-to-Case Case-to-Sink, Flat, Greased Surface Junction-to-Ambient
Typ.
--- 0.50 ---
Max.
0.90 --- 62
Units
C/W
www.irf.com
1
4/24/98
IRF1104
Electrical Characteristics @ TJ = 25C (unless otherwise specified)
V(BR)DSS
V(BR)DSS/TJ
RDS(on) VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf LD LS Ciss Coss Crss
Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Forward Transconductance Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Internal Drain Inductance Internal Source Inductance Input Capacitance Output Capacitance Reverse Transfer Capacitance
Min. 40 --- --- 2.0 37 --- --- --- --- --- --- --- --- --- --- --- --- --- --- --- ---
Typ. --- 0.038 --- --- --- --- --- --- --- --- --- --- 15 114 28 19 4.5 7.5 2900 1100 250
Max. Units Conditions --- V VGS = 0V, ID = 250A --- V/C Reference to 25C, ID = 1mA 0.009 VGS = 10V, ID = 60A 4.0 V VDS = VGS, ID = 250A --- S VDS = 25V, ID = 60A 25 VDS = 40V, VGS = 0V A 250 VDS = 32V, VGS = 0V, TJ = 150C 100 VGS = 20V nA -100 VGS = -20V 93 ID = 60A 29 nC VDS = 32V 30 VGS = 10V, See Fig. 6 and 13 --- VDD = 20V --- ID = 60A ns --- RG = 3.6 --- RD = 0.33, See Fig. 10 Between lead, --- 6mm (0.25in.) nH G from package --- and center of die contact --- VGS = 0V --- pF VDS = 25V --- = 1.0MHz, See Fig. 5
D
S
Source-Drain Ratings and Characteristics
IS
ISM
VSD trr Qrr ton Notes:
Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse RecoveryCharge Forward Turn-On Time
Min. Typ. Max. Units
Conditions D MOSFET symbol --- --- 100 showing the A G integral reverse --- --- 400 S p-n junction diode. --- --- 1.3 V TJ = 25C, IS = 60A, VGS = 0V --- 74 110 ns TJ = 25C, IF = 60A --- 188 280 nC di/dt = 100A/s Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
Pulse width 300s; duty cycle 2%. Caculated continuous current based on maximum allowable
junction temperature;for recommended current-handling of the package refer to Design Tip # 93-4
Starting TJ = 25C, L = 194H
RG = 25, IAS = 60A. (See Figure 12)
ISD 60A, di/dt 304A/s, VDD V(BR)DSS,
TJ 175C
2
www.irf.com
IRF1104
1000
VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V BOTTOM 4.5V TOP
1000
I D , Drain-to-Source Current (A)
100
I D , Drain-to-Source Current (A)
VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V BOTTOM 4.5V TOP
100
4.5V
10
10
4.5V
20s PULSE WIDTH TJ = 25 C
1 10 100
1 0.1
1 0.1
20s PULSE WIDTH TJ = 175 C
1 10 100
VDS , Drain-to-Source Voltage (V)
VDS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
1000
2.5
R DS(on) , Drain-to-Source On Resistance (Normalized)
ID = 100A
I D , Drain-to-Source Current (A)
100
TJ = 175 C
2.0
1.5
10
TJ = 25 C
1
1.0
0.5
0.1 4.0
V DS = 50V 20s PULSE WIDTH 5.0 6.0 7.0 8.0 9.0 10.0
0.0 -60 -40 -20 0
VGS = 10V
20 40 60 80 100 120 140 160 180
VGS , Gate-to-Source Voltage (V)
TJ , Junction Temperature( C)
Fig 3. Typical Transfer Characteristics
Fig 4. Normalized On-Resistance Vs. Temperature
www.irf.com
3
IRF1104
5000
4000
VGS , Gate-to-Source Voltage (V)
VGS = Ciss = Crss = Coss =
0V, f = 1MHz Cgs + Cgd , Cds SHORTED Cgd Cds + Cgd
20
ID = 60A
VDS = 32V VDS = 20V
C, Capacitance (pF)
15
3000
Ciss
10
2000
Coss
1000
5
Crss
0 1 10 100 0 0 25 50
FOR TEST CIRCUIT SEE FIGURE 13
75 100
VDS , Drain-to-Source Voltage (V)
Q G , Total Gate Charge (nC)
Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage
Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage
1000
10000
ISD , Reverse Drain Current (A)
OPERATION IN THIS AREA LIMITED BY RDS(on)
1000 10us
TJ = 175 C
10
I D , Drain Current (A)
100
100
100us 1ms
1
TJ = 25 C
10
10ms
0.1 0.2
V GS = 0 V
0.8 1.4 2.0 2.6
1 1
TC = 25 C TJ = 175 C Single Pulse
10 100
VSD ,Source-to-Drain Voltage (V)
VDS , Drain-to-Source Voltage (V)
Fig 7. Typical Source-Drain Diode Forward Voltage
Fig 8. Maximum Safe Operating Area
4
www.irf.com
IRF1104
100
LIMITED BY PACKAGE
VDS VGS
RD
80
D.U.T.
+
I D , Drain Current (A)
RG
-VDD
60
10V
Pulse Width 1 s Duty Factor 0.1 %
40
Fig 10a. Switching Time Test Circuit
20
VDS 90%
0 25 50 75 100 125 150 175
TC , Case Temperature ( C)
10% VGS
Fig 9. Maximum Drain Current Vs. Case Temperature
td(on)
tr
t d(off)
tf
Fig 10b. Switching Time Waveforms
1
Thermal Response (Z thJC )
D = 0.50
0.20 0.10 0.05 0.02 0.01 SINGLE PULSE (THERMAL RESPONSE) P DM t1 t2 Notes: 1. Duty factor D = t 1 / t 2 2. Peak TJ = P DM x Z thJC + TC 0.0001 0.001 0.01 0.1 1
0.1
0.01 0.00001
t1 , Rectangular Pulse Duration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
www.irf.com
5
IRF1104
EAS , Single Pulse Avalanche Energy (mJ)
800
TOP BOTTOM
600
1 5V
ID 24A 42A 60A
VD S
L
D R IV E R
RG
20V
D .U .T
IA S tp
+ V - DD
400
A
0 .0 1
200
Fig 12a. Unclamped Inductive Test Circuit
0 25 50 75 100 125 150 175
V (B R )D S S tp
Starting T , Junction Temperature( C) J
Fig 12c. Maximum Avalanche Energy Vs. Drain Current
IAS
Fig 12b. Unclamped Inductive Waveforms
Current Regulator Same Type as D.U.T.
50K
QG
12V
.2F .3F
10 V
QGS VG QGD
VGS
3mA
D.U.T.
+ V - DS
Charge
IG
ID
Current Sampling Resistors
Fig 13a. Basic Gate Charge Waveform
Fig 13b. Gate Charge Test Circuit
6
www.irf.com
IRF1104
Peak Diode Recovery dv/dt Test Circuit
D.U.T
+
+
Circuit Layout Considerations * Low Stray Inductance * Ground Plane * Low Leakage Inductance Current Transformer
-
+
RG * * * * dv/dt controlled by RG Driver same type as D.U.T. ISD controlled by Duty Factor "D" D.U.T. - Device Under Test
+ VDD
Driver Gate Drive P.W. Period D=
P.W. Period VGS=10V
*
D.U.T. ISD Waveform Reverse Recovery Current Body Diode Forward Current di/dt D.U.T. VDS Waveform Diode Recovery dv/dt
VDD
Re-Applied Voltage Inductor Curent
Body Diode
Forward Drop
Ripple 5%
ISD
* VGS = 5V for Logic Level Devices Fig 14. For N-Channel HEXFETS
www.irf.com
7
IRF1104
Package Outline
TO-220AB Outline Dimensions are shown in millimeters (inches)
2.87 (.11 3) 2.62 (.10 3) 10.54 (.415) 10.29 (.405) 3.7 8 (.149 ) 3.5 4 (.139 ) -A 6.47 (.255) 6.10 (.240) -B4.69 (.185 ) 4.20 (.165 ) 1.32 (.052) 1.22 (.048)
4 15.24 (.60 0) 14.84 (.58 4)
1.15 (.04 5) M IN 1 2 3
LE A D A S S IG N M E N T S 1 - G ATE 2 - D R A IN 3 - SOURCE 4 - D R A IN
14.09 (.55 5) 13.47 (.53 0)
4.06 (.160) 3.55 (.140)
3X 3X 1 .40 (.0 55) 1 .15 (.0 45)
0.93 (.037) 0.69 (.027) M BAM
3X
0.55 (.022) 0.46 (.018)
0.36 (.014)
2.54 (.100) 2X NO TES: 1 D IM E N S IO N IN G & T O LE R A N C IN G P E R A N S I Y 14.5M , 1 982. 2 C O N TR O LLIN G D IM E N S IO N : IN C H
2.92 (.115) 2.64 (.104)
3 O U T LIN E C O N F O R M S TO JE D E C O U T LIN E T O -2 20A B . 4 H E A T S IN K & LE A D M E A S U R E M E N T S D O NO T IN C LU D E B U R R S .
Part Marking Information
TO-220AB
E X A M P L E : TH IS IS A N IR F 1 0 1 0 W ITH A S S E M B L Y LOT CO DE 9B1M
A
IN TE R N A T IO N A L R E C T IF IE R LO GO ASSEMBLY LOT CODE
PART NUMBER IR F 1 0 1 0 9246 9B 1M
D A TE C O D E (Y Y W W ) YY = YEAR W W = W EEK
WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, Tel: (310) 322 3331 EUROPEAN HEADQUARTERS: Hurst Green, Oxted, Surrey RH8 9BB, UK Tel: ++ 44 1883 732020 IR CANADA: 7321 Victoria Park Ave., Suite 201, Markham, Ontario L3R 2Z8, Tel: (905) 475 1897 IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 6172 96590 IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 11 451 0111 IR FAR EAST: K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo Japan 171 Tel: 81 3 3983 0086 IR SOUTHEAST ASIA: 315 Outram Road, #10-02 Tan Boon Liat Building, Singapore 0316 Tel: 65 221 8371 http://www.irf.com/ Data and specifications subject to change without notice. 4/98
8
www.irf.com

▲Up To Search▲

Price & Availability of IRF1104

	To Download IRF1104 Datasheet File
If you can't view the Datasheet, Please click here to try to view without PDF Reader .